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Temperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl2

TitleTemperature dependence of neutral and positively charged Si and SiCl etch products during argon-ion-enhanced etching of Si(100) by Cl2
Publication TypeJournal Article
Year of Publication2000
AuthorsMaterer, N, Goodman, RS, Leone, SR
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume18
Issue1
Pagination191
Date PublishedJan-01-2000
ISSN0734211X
DOI10.1116/1.591171
Short TitleJ. Vac. Sci. Technol. B