Facebook Twitter Instagram YouTube

A study of the GaAs–Si(100) interface using laser probing of thermal desorption kinetics

TitleA study of the GaAs–Si(100) interface using laser probing of thermal desorption kinetics
Publication TypeJournal Article
Year of Publication1990
AuthorsSmilgys, RV, Oostra, DJ, Leone, SR
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume8
Issue5
Pagination1102
Date PublishedJan-09-1990
ISSN0734211X
DOI10.1116/1.584924
Short TitleJ. Vac. Sci. Technol. B