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Enhanced etching of Si(100) by neutral chlorine beams with kinetic energies up to 6 eV

TitleEnhanced etching of Si(100) by neutral chlorine beams with kinetic energies up to 6 eV
Publication TypeJournal Article
Year of Publication1992
AuthorsCampos, FX, Weaver, GC, Waltman, CJ, Leone, SR
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume10
Issue5
Pagination2217
Date PublishedJan-09-1992
ISSN0734211X
DOI10.1116/1.586192
Short TitleJ. Vac. Sci. Technol. B