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Chemistry of arsenic incorporation during GaAs/GaAs(100) molecular beam epitaxy probed by simultaneous laser flux monitoring and reflection high-energy electron diffraction

TitleChemistry of arsenic incorporation during GaAs/GaAs(100) molecular beam epitaxy probed by simultaneous laser flux monitoring and reflection high-energy electron diffraction
Publication TypeJournal Article
Year of Publication1996
AuthorsOtt, AK, Casey, SM, Alstrin, AL, Leone, SR
JournalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Volume14
Issue4
Pagination2742
Date PublishedJan-07-1996
ISSN0734211X
DOI10.1116/1.589013
Short TitleJ. Vac. Sci. Technol. B

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