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Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(001)

TitleArsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(001)
Publication TypeJournal Article
Year of Publication2002
AuthorsLiu, B, Berrie, CL, Kitajima, T, Leone, SR
JournalJournal of Crystal Growth
Volume241
Issue3
Pagination271 - 276
Date PublishedJan-06-2002
ISSN00220248
DOI10.1016/S0022-0248(02)01080-1
Short TitleJournal of Crystal Growth