Join us for a STROBE Seminar from Dr. Erik Hosler of Globalfoundies.
Moore’s Law is inevitably slowing due to a process complexity explosion as the semiconductor industry approaches the fundamental physical limitation of silicon-based transistors. Rooted in this increase of process complexity is the need to develop more exotic, three-dimensional transistor designs, but in parallel, many companies have also fervently begun to explore non-Von Neumann architectures. At the forefront of next-generation technologies are artificial intelligence, neuromorphic and quantum computing, where each of these technologies is reliant on novel material innovations to enable functionality and scaling. This is like traditional CMOS architectures scaling from the 90nm node onward, but the industry is ill-equipped to make the necessary core discoveries to establish predictive manufacturing flows.
Disruptive innovation in advanced CMOS and quantum architectures requires advanced imaging and spectroscopic tools to understand fundamental process and device performance. Extreme-ultraviolet (EUV) techniques potentially offers a necessary improvement in critical dimension resolution, as well as elemental and chemical specificity. Several lab-to-fab use cases are proposed to improve fundamental understanding of device performance as well as process-based metrology and inspection within the background of ULSI manufacturing flows.