TY - JOUR
AU - Alan Gallagher
BT - Journal of Applied Physics
DA - Jan-01-1986
DO - 10.1063/1.337312
PY - 1986
EP - 1369
T2 - Journal of Applied Physics
TI - Amorphous silicon deposition rates in diode and triode discharges
VL - 60
SN - 00218979
ER -