TY - JOUR
AU - F. Cruz
AU - M. Stowe
AU - Jun Ye
AB - 	
A tapered semiconductor amplifier is injection seeded by a femtosecond optical frequency comb at 780nm from a mode-locked Ti:sapphire laser. Energy gains of more than 17dB (12dB ) are obtained for 1mW (20mW) of average input power when the input pulses are stretched into the picosecond range. A spectral window of supercontinuum light generated in a photonic fiber has also been amplified. Interferometric measurements show sub-Hertz linewidths for a heterodyne beat between the input and amplified comb components, yielding no detectable phase-noise degradation under amplication. These amplifiers can be used to boost the infrared power in f-to- 2f interferometers used to determine the carrier-to-envelope offset frequency, with clear advantages for stabilization of octave-spanning femtosecond lasers and other supercontinuum light sources.

© 2006 Optical Society of America
BT - Optics Letters
DA - 2006-05
DO - 10.1364/OL.31.001337
N2 - 	
A tapered semiconductor amplifier is injection seeded by a femtosecond optical frequency comb at 780nm from a mode-locked Ti:sapphire laser. Energy gains of more than 17dB (12dB ) are obtained for 1mW (20mW) of average input power when the input pulses are stretched into the picosecond range. A spectral window of supercontinuum light generated in a photonic fiber has also been amplified. Interferometric measurements show sub-Hertz linewidths for a heterodyne beat between the input and amplified comb components, yielding no detectable phase-noise degradation under amplication. These amplifiers can be used to boost the infrared power in f-to- 2f interferometers used to determine the carrier-to-envelope offset frequency, with clear advantages for stabilization of octave-spanning femtosecond lasers and other supercontinuum light sources.

© 2006 Optical Society of America
PY - 2006
EP - 1337
T2 - Optics Letters
TI - Tapered semiconductor amplifiers for optical frequency combs in the near infrared
VL - 31
SN - 0146-9592
ER -